Microscopic defects on MBE grown LWIR Hg1-xCdxTe material and their impact on device performance

Journal of Electronic Materials

Volumn 28, Issue 6, 1999, Pages 649-653

  Wijewarnasuriya, P S ^a   Zandian, M ^a   Young, D B ^a   Waldrop, J ^a   Edwall, D D ^a   McLevige, W V ^a   Lee, D ^a   Arias, J ^a   D'Souza, A I ^b  

^a ROCKWELL SCIENCE CENTER   (United States)

^b BOEING COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; HETEROJUNCTIONS; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; TERNARY SYSTEMS;

DOUBLE LAYER PLANAR HETEROSTRUCTURES (DLPH); ETCH PIT DENSITY (EPD);

INFRARED DETECTORS;

EID: 0032656244     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0048-4     Document Type: Article

References (6)

1. S.M. Johnson, D.R. Rhiger, J.P. Rosbeck, J.M. Peterson, S.M. Taylor and M.E. Boyd, J. Vac. Sci. Technol, B 10, 1499 (1992).
2. M.C. Chen, R.S. List, D. Chandra, M.J. Bevan, L. Colombo and H.F. Schaake, J. Electron. Mater. 25, 1375 (1996).
3. J.M. Arias, J.G. Pasko, M. Zandian, S.H. Shin, G.M. Williams, L.O. Bubulac, R.E. deWames and W.E. Tennant, Appl. Phys. Lett. 62, 976 (1993).
4. P. Mackett, Properties of Narrow Gap Cadmium-based Compounds, EMIS Datareview Series No. 10, ed. Peter Capper, (Inspec, 1994), p. 188.
5. M. Zandian, J.M. Arias, J. Bajaj, J.G. Pasko, L.O. Bubulac and R.E. DeWames, J.Electron. Mater. 24, 1207 (1995).
6. L.O. Bubulac, unpublished results.