Automated compositional control of Hg1-xCdxTe during MBE, using in situ spectroscopic ellipsometry

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 500-503

  Almeida, L A ^a   Johnson, J N ^a   Benson, J D ^b   Dinan, J H ^b   Johs, B ^c  

^a E OIR Measurements Inc   (United States)

^b NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

^c J A Woollam Co Inc   (Canada)

Author keywords

HgCdTe; In situ control; Infrared (IR) detectors; Molecular beam epitaxy (MBE); Spectroscopic ellipsometry

Indexed keywords

EID: 0000761169     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0004-8     Document Type: Article

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