In-situ monitoring of temperature and alloy composition of Hg1-xCdxTe using FTIR spectroscopic techniques

Journal of Electronic Materials

Volumn 28, Issue 6, 1999, Pages 743-748

  Daraselia, M ^a   Grein, C H ^a   Rujirawat, S ^a   Yang, B ^a   Sivananthan, S ^a   Aqariden, F ^b   Shih, H D ^b  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSORS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; TEMPERATURE MEASUREMENT;

MERCURY CADMIUM TELLURIDE; TEMPERATURE SENSORS;

SEMICONDUCTING FILMS;

EID: 0032657064     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0064-4     Document Type: Article

References (14)

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