Grazing incidence structural characterization of InAs quantum dots on GaAs(0 0 1)

Applied Surface Science

Volumn 175-176, Issue , 2001, Pages 606-612

  Zhang, K ^a   Heyn, Ch ^a   Hansen, W ^a   Schmidt, Th ^b   Falta, J ^b  

^a UNIVERSITY OF HAMBURG   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

Grazing incidence small angle X ray scattering; Grazing incidence X ray diffraction; Molecular beam epitaxy; Self assembled InAs quantum dots; Shape, ordering and strain status

Indexed keywords

DEFORMATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; STRAIN; X RAY DIFFRACTION; X RAY SCATTERING;

GRAZING INCIDENCE SMALL ANGLE X RAY SCATTERING; GRAZING INCIDENCE X RAY DIFFRACTION; SELF ASSEMBLED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 18544401992     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00139-8     Document Type: Article

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