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Volumn 42, Issue 6 B, 2003, Pages 4166-4168
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Facet formation of uniform InAs quantum dots by molecular beam epitaxy
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Author keywords
Facet; High aspect ratio; InAs quantum dot; Molecular beam epitaxy; Self size limiting effect; Stranski Krastanov growth mode; Uniformity
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Indexed keywords
ARSENIC;
ASPECT RATIO;
COALESCENCE;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING INDIUM COMPOUNDS;
SELF-SIZE-LIMITING EFFECT;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0042364953
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.42.4166 Document Type: Conference Paper |
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Times cited : (28)
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References (8)
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