Parasitic conduction in a 0.13 μm CMOS technology at low temperature

Journal De Physique. IV : JP

Volumn 12, Issue 3, 2002, Pages

  Mercha, A ^a   Rafi, J M ^a   Simoen, E ^a   Augendre, E ^a   Claeys, C ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON TUNNELING; GATES (TRANSISTOR); LOW TEMPERATURE OPERATIONS; MOSFET DEVICES; SUBSTRATES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

PARASITIC CONDUCTION; SHALLOW TRENCH ISOLATION; VALENCE BAND;

CMOS INTEGRATED CIRCUITS;

EID: 0036564062     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1051/jp420020037     Document Type: Conference Paper

References (4)