Floating body effects in 0.15 μm partially depleted SOI MOSFETs below 1 V

IEEE International SOI Conference

Volumn , Issue , 1996, Pages 70-71

  Saraya, T ^a   Takamiya, M ^a   Duyet, T N ^a   Tanaka, T ^a   Ishikuro, H ^a   Hiramoto, T ^a   Ikoma, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; ENERGY GAP; IONIZATION OF SOLIDS; SILICON ON INSULATOR TECHNOLOGY; TRANSIENTS;

FLOATING BODY EFFECTS; IMPACT IONIZATION;

MOSFET DEVICES;

EID: 0030403402     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)