Transient behavior and low VDS hysteresis in PD SOI MOSFETs

Microelectronics Reliability

Volumn 38, Issue 5, 1998, Pages 759-765

  Perron, L M ^a,b   Hamaguchi, C ^b   Lacaita, A L ^a   Maegawa, S ^c   Yamaguchi, Y ^c  

^a POLITECNICO DI MILANO   (Italy)

^b OSAKA UNIVERSITY   (Japan)

^c MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HYSTERESIS; IMPACT IONIZATION; PARAMETER ESTIMATION; SILICON ON INSULATOR TECHNOLOGY;

PARTIALLY DEPLETED (PD) SILICON ON INSULATOR CIRCUITS;

MOSFET DEVICES;

EID: 0032064281     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00025-0     Document Type: Article

References (16)

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