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Volumn 46, Issue 11, 2002, Pages 1709-1713

Transient effects in PD SOI MOSFETs and potential DRAM applications

Author keywords

DRAM; Partially depleted; Self heating; SOI MOSFET; Transient effects

Indexed keywords

CAPACITORS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC POTENTIAL; IONIZATION; SILICON ON INSULATOR TECHNOLOGY;

EID: 0036838338     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00148-X     Document Type: Conference Paper
Times cited : (6)

References (10)
  • 1
    • 84907896308 scopus 로고    scopus 로고
    • Mainstreaming of the SOI technology
    • Shahidi G.G. Mainstreaming of the SOI technology. Proceedings ESSDERC'99. 1999;3-10.
    • (1999) Proceedings ESSDERC'99 , pp. 3-10
    • Shahidi, G.G.1
  • 2
    • 0033190247 scopus 로고    scopus 로고
    • Physics and characterization of transient effects in SOI transistors
    • Lacatita A.L., Perron L.M. Physics and characterization of transient effects in SOI transistors. Microelectron. Eng. 48:1999;319-326.
    • (1999) Microelectron. Eng. , vol.48 , pp. 319-326
    • Lacatita, A.L.1    Perron, L.M.2
  • 6
    • 0035334184 scopus 로고    scopus 로고
    • Compact analytical modeling of SOI partially depleted MOSFETs with LETISOI
    • Faynot O.et al. Compact analytical modeling of SOI partially depleted MOSFETs with LETISOI. Solid-State Electron. 45:2001;599-605.
    • (2001) Solid-State Electron. , vol.45 , pp. 599-605
    • Faynot, O.1
  • 7
    • 0032139808 scopus 로고    scopus 로고
    • Generation recombination transient effects in partially depleted SOI transistors: Systematic experiments and simulations
    • Munteanu D. et al. Generation recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations. IEEE Trans. Electron Dev. 45:1998;1678-1683.
    • (1998) IEEE Trans. Electron Dev. , vol.45 , pp. 1678-1683
    • Munteanu, D.1
  • 8
    • 0033190142 scopus 로고    scopus 로고
    • SMOS/SOI technologies for low-power and low-voltage circuits
    • Pelloie J. et al. SMOS/SOI technologies for low-power and low-voltage circuits. Microelectron. Eng. 48:1999;327-334.
    • (1999) Microelectron. Eng. , vol.48 , pp. 327-334
    • Pelloie, J.1
  • 9
    • 0026142035 scopus 로고
    • A high speed clamped bit line current mode sense amplifier
    • Blalock T.N.et al. A high speed clamped bit line current mode sense amplifier. IEEE JSSC. 26:1991;542.
    • (1991) IEEE JSSC , vol.26 , pp. 542
    • Blalock, T.N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.