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Volumn 46, Issue 11, 2002, Pages 1709-1713
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Transient effects in PD SOI MOSFETs and potential DRAM applications
a
EPFL
(Switzerland)
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Author keywords
DRAM; Partially depleted; Self heating; SOI MOSFET; Transient effects
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Indexed keywords
CAPACITORS;
DYNAMIC RANDOM ACCESS STORAGE;
ELECTRIC POTENTIAL;
IONIZATION;
SILICON ON INSULATOR TECHNOLOGY;
TRANSIENT EFFECTS;
MOSFET DEVICES;
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EID: 0036838338
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/S0038-1101(02)00148-X Document Type: Conference Paper |
Times cited : (6)
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References (10)
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