Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET

IEEE Transactions on Electron Devices

Volumn 47, Issue 1, 2000, Pages 97-102

  Cheng, Zhi Yuan ^a   Ling, C H ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; ELECTRIC POTENTIAL; GATES (TRANSISTOR); INTEGRATED CIRCUIT TESTING; SILICON ON INSULATOR TECHNOLOGY;

CARRIER GENERATION LIFETIME; COMBINATION LIFETIME; SILICON FILM; STEADY STATE DRAIN CURRENT TECHNIQUE;

MOSFET DEVICES;

EID: 0033887353     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.817573     Document Type: Article

References (12)