High-quality GaN on AIN multiple intermediate layer with migration enhanced epitaxy by RF-molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 3 A/B, 2000, Pages

  Sugihara, Daisuke ^a   Kikuchi, Akihiko ^a   Kusakabe, Kazuhide ^a   Nakamura, Shinichi ^a   Toyoura, Yousuke ^a   Yamada, Takayuki ^a   Kishino, Katsumi ^a  

^a SOPHIA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM NITRIDE; GALLIUM NITRIDE; MIGRATION ENHANCED EPITAXY; MULTIPLE INTERMEDIATE LAYER;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033752322     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l197     Document Type: Article

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