Atomic force microscopy study of Si(111) surface morphology and electrical characteristics of Pd/n-Si Schottky diodes: Effect of cleaning procedures

Surface and Interface Analysis

Volumn 26, Issue 10, 1998, Pages 748-757

  Deenapanray, P N K ^a,c   Auret, F D ^a   Myburg, G ^a   Hillie, K T ^b   Demanet, C M ^b  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b UNIVERSITY OF TRANSKEI   (South Africa)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

AFM; Schottky diode; Si(111); Surface cleaning

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CONTAMINATION; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; MORPHOLOGY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SURFACE CLEANING; SURFACE ROUGHNESS;

CAPACITANCE VOLTAGE MEASUREMENTS; OXIDE REMOVAL;

SURFACES;

EID: 0032158412     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199809)26:10<748::AID-SIA424>3.0.CO;2-F     Document Type: Article

References (38)

1. A. Grub, A. Simon, V. Krozer and H. L Hartnagel, Arch. Elektrotech. (Berlin) 77, 57 (1993).
2. F. J. Jiménez-Leube, M. Clement, J. Sanz Maubes and T. Rodríguez, J. Vac. Sci. Technol. B 15, 903 (1997).
3. D. V. Lang, J. Appl. Phys. 45, 3014 (1974).
4. F. H. Mullins and A. Brunnschweiler, Solid State Electron. 19, 47 (1976).
5. O. O. Awadelkarim, T. Gu, P. I. Mikulan, R. A. Ditizio and S. J. Fonash, Appl. Phys. Lett. 62, 958 (1993).
6. S. Ashok, T. P. Chow and B. J. Baliga, Appl. Phys. Lett. 42, 687 (1983).
7. W. C. Neihaus and B. Schwartz, Solid State Electron. 19, 175 (1976).
8. C. M. Garner, C. Y. Su, W. A. Saperstein, K. G. Jew, C. S. Lee, G. L. Pearson and W. E. Spicer, J. Appl. Phys. 50, 3376 (1979).
9. I. Schiota, K. Motoya, T. Omi, N. Miyamoto and J. Nishizawa, J. Electrochem. Soc. 124, 155 (1977).
10. M.S. Tyagi, in Metal-Semiconductor Schottky Barrier Junctions and their Applications, edited by B. L. Sharma, p. 14. Plenum Press, New York (1984).
11. E. H. Rhoderick and R. H. Williams, in Metal-Semiconductor Contacts, edited by P. Hammond and R. L. Grimsdale, p. 35. Clarendon Press, Oxford (1988).
12. J. B. Pendry, Low-energy Electron Diffraction. Academic Press, London (1974); G. A. Samorjai and M. A. van Hove, in Structure and Bonding, p. 141. Springer-Verlag, Berlin (1979) ; J. J. Lander, Prog. Solid State Chem. 2, 26 (1965).
13. J. B. Pendry, Low-energy Electron Diffraction. Academic Press, London (1974); G. A. Samorjai and M. A. van Hove, in Structure and Bonding, p. 141. Springer-Verlag, Berlin (1979) ; J. J. Lander, Prog. Solid State Chem. 2, 26 (1965).
14. J. B. Pendry, Low-energy Electron Diffraction. Academic Press, London (1974); G. A. Samorjai and M. A. van Hove, in Structure and Bonding, p. 141. Springer-Verlag, Berlin (1979) ; J. J. Lander, Prog. Solid State Chem. 2, 26 (1965).
15. D. W. Pashley, Epitaxial Growth, Part A, edited by J. W. Mathews). Academic Press, New York (1975).
16. A. Bianconi, Appl. Surf. Sci. 6, 392 (1981); T. H. Hayes and J. B. Boyce, Solid State Physics, pp. 173-351. Academic Press, New York (1982).
17. A. Bianconi, Appl. Surf. Sci. 6, 392 (1981); T. H. Hayes and J. B. Boyce, Solid State Physics, pp. 173-351. Academic Press, New York (1982).
18. J. W. Mayer and J. M. Poate, Thin Films - Interdiffusion and Reactions, Chapter 6, edited by J. M. Poate, K. N. Tu and J. W. Mayer. Wiley, New York (1978).
19. P. M. Petroff, J. Vac. Sci. Technol. 14, 973 (1977).
20. J. S. Vermaak, L. W, Snyman and F. D. Auret, J. Cryst. Growth 42, 132 (1977).
21. F. D. Auret, J. Electrochem. Soc. 129, 2752 (1982).
22. G. S. Higashi, Y. J. Chabal, G. W. Trucks and K. Ragavachari, Appl. Phys. Lett. 56, 656 (1990).
23. R. S. Becker, G. S. Higashi, Y. J. Chabal and A. J. Becker, Phys. Rev. Lett. 65, 1917 (1990).
24. Juho Song, P. K. Ajmera and G. S. Lee, J. Vac. Sci. Technol. B 14, 727 (1996).
25. G. Lucovsky, Z. Jing and D. R. Lee, J. Vac. Sci. Technol. B 14, 2832 (1996).
26. D. Schmidt, H. Niimi, B. J. Hinds, D. E. Aspnes and G. Lucovsky, J. Vac. Sci. Technol. B 14, 2812 (1996).
27. G. W. Trucks, Krishnan Raghavachari, G. S. Higashi and Y. J. Chabal, Phys. Rev. Lett. 65, 504 (1990).
28. T. Takahagi, I. Nagai, A. Ishitani, H. Kuroda and Y. Nagasawa, J. Appl. Phys. 64, 3516 (1988).
29. H. Mishima, T. Yasui, T. Mizuniwa, M. Abe and T. Ohmi, IEEE Trans. Semicond. Manu. 2, 69 (1989).
30. Y. Kuni, M. Tabe and Y. Sakakibara, Jpn. J. Appl. Phys. 26, 1008 (1987).
31. H. Kim and R. Reif, Thin Solid Films 305, 280 (1997).
32. W. Kern and D. A. Puotinen, RCA Rev. 31, 187 (1970).
33. S. Watanabe, N. Nakayama and T. Ito, Appl. Phys. Lett. 59, 1458 (1991).
34. M. S. Tyagi, in Metal-Semiconductor Schottky Barrier Junctions and their Applications, edited by B. L. Sharma, p. 20. Plenum Press, New York (1984).
35. E. H. Rhoderick and R. H. Williams, in Metal-Semiconductor Contacts, edited by P. Hammond and R. L. Grimsdale, p. 15. Clarendon Press, Oxford (1988).
36. J. L Freeouf, G. W. Rubloff, P. S. Ho and T. S. Kuan, J. Vac. Sci. Technol. 17, 916 (1980).
37. S. P. Murarka, in Sillcides for VLSI Applications, p. 17. Academic Press, New York (1983).
38. G. Gould and E. A. Irene, J. Electrochem. Soc. 135, 1535 (1988).