Uniform precipitation of oxygen in large diameter wafers

Microelectronic Engineering

Volumn 45, Issue 2, 1999, Pages 155-160

  Kissinger, G ^a   Vanhellemont, J ^b   Lambert, U ^b   Graf D ^b   Richter, H ^a  

^a IHP   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; OXYGEN; POINT DEFECTS; PRECIPITATION (CHEMICAL);

DEFECT DENSITY; NUCLEI DENSITY DISTRIBUTION; NUCLEI SIZE DISTRIBUTION;

SILICON WAFERS;

EID: 0032590890     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00119-7     Document Type: Article

References (14)

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