Oxygen precipitation in floating-zone silicon grown in hydrogen ambience and its application

Materials Science and Engineering: B

Volumn 83, Issue 1-3, 2001, Pages 106-110

  Li, Huaixiang ^a   Li, Chuanbo ^a   He, Yuejiao ^a   Liu, Guirong ^b   Chen, Yansheng ^b   Duan, Shuzhen ^b  

^a SHANDONG NORMAL UNIVERSITY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

Denuded zone; NTD; Oxygen precipitates; Silicon

Indexed keywords

ACTIVATION ENERGY; ANNEALING; HYDROGEN; INFRARED SPECTROSCOPY; LIGHT ABSORPTION; OXYGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

DENUDED ZONE; NEUTRON TRANSMUTATION DOPING (NTD);

SILICON WAFERS;

EID: 0035927979     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00502-5     Document Type: Article

References (11)