Transmission electron microscopic observation of oxygen precipitates in nitrogen-doped silicon

Microelectronic Engineering

Volumn 56, Issue 1-2, 2001, Pages 205-208

  Li, Liben ^a   Yang, Deren ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Nitrogen; Oxygen precipitate; Silicon

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CRYSTAL GROWTH FROM MELT; MORPHOLOGY; NITROGEN; OXYGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DOPING; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

NITROGEN-DOPED SILICON;

SILICON WAFERS;

EID: 0035341557     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00528-1     Document Type: Article

References (12)

1. T.Y. Tan, E.E. Gardner, W.K. Tice, Appl. Phys. Lett. 30 (1977) 175.
2. A. Bourret, in: Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, MRS, Boston, MA, 1985, p. 223.
3. P. Capper, A.W. Iones, J. Appl. Phys. 48 (1977) 1646.
4. W. Bergholz, M.J. Binns, G.R. Booker, J.C. Hutchison, S.H. Kinder, S. Messoloras, R.C. Newman, R.J. Stewart, J.G. Wilkes, Philos. Mag. B 59 (1989) 499.
5. H. Bender, Phys. Status Solidi A 86 (1984) 245.
6. W.A. Tiller, S. Hahn, F.A. Ponce, J. Appl. Phys. 59 (1986) 3255.
7. H.K. Yang, F.H. Kappert, H.G. Schwutte, Phys. Status Solidi (a) 50 (1978) 221.
8. A.F. Ponce, T. Yamashita, S. Hahn, Appl. Phys. Lett. 43 (1983) 1051.
9. H.J. Stein, in: J.C. Mikkelsen Jr., S.J. Pearton, J.W. Corbett, S.J. Pennycook (Eds.), Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, MRS, Boston, MA, 1985, p. 523.
10. M. Suezawa, K. Sunimo, H. Harada, T. Abe, Jpn. J. Appl. Phys. 27 (1988) 62.
11. A. Ikari, K. Nakai, Y Tachikawa, Solid State Phenomena 70 (1999) 161.
12. D. Yang, X. Ma, R. Fan, J. Zhang, L. Li, D. Que, Physica B 273 (1999) 308.