Ultrashallow junction formation by point defect engineering

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 302-305

  Shao, Lin ^a   Thompson, Phillip E ^b   Van der Heide, P A W ^c   Patel, Sanjay ^d   Chen, Quak Y ^a   Wang, Xuemei ^a   Chen, Hui ^a   Liu, Jiarui ^a   Chu, Wei Kan ^a  

^a University of Houston   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF HOUSTON   (United States)

^d Materials Analytical Services   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; BORON; CONCENTRATION (PROCESS); DIFFUSION; ION BOMBARDMENT; MOLECULAR BEAM EPITAXY; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SUPERLATTICES; SURFACE PHENOMENA; THERMAL EFFECTS;

POINT DEFECT ENGINEERING; ULTRASHALLOW JUNCTION FORMATION;

SEMICONDUCTOR JUNCTIONS;

EID: 1642418026     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1621887     Document Type: Conference Paper

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