Point defect engineering and its application in shallow junction formation

Electrochemical and Solid-State Letters

Volumn 5, Issue 10, 2002, Pages

  Shao, Lin ^a   Liu, J R ^a   Thompson, P E ^b   Wang, X M ^a   Rusakova, I ^a   Chen, H ^a   Chu, Wei Kan ^a  

^a UNIVERSITY OF HOUSTON   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ASSOCIATION REACTIONS; CRYSTAL GROWTH FROM MELT; DIFFUSION IN SOLIDS; HETEROJUNCTIONS; ION BOMBARDMENT; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY; STRAIN MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

BORIDE ENHANCED DIFFUSION; SHALLOW JUNCTION FORMATION; TRANSPORT OF IONS IN MATTER;

SILICON;

EID: 0036795896     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1504903     Document Type: Article

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