Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon

Applied Physics Letters

Volumn 80, Issue 6, 2002, Pages 947-949

  Coleman, P G ^a   Burrows, C P ^a   Knights, A P ^b  

^a University of Bath   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ION DOSE; ION RANGES; MEAN CONCENTRATIONS; MEV IONS; POSITRON SPECTROSCOPY; SIMPLE EXPRESSION; UPPER LIMITS; VACANCY CONCENTRATION;

GERMANIUM; ION IMPLANTATION; SILICON;

IONS;

EID: 79955996106     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1448856     Document Type: Article

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