Athermal annealing at room temperature and enhanced activation of low- energy boron implants with high-energy Si coimplantation

Journal of Applied Physics

Volumn 92, Issue 8, 2002, Pages 4307-4311

  Shao, Lin ^a   Wang, Xuemei ^a   Liu, Jiarui ^a   Bennett, Joe ^b   Larsen, Larry ^b   Chu, Wei Kan ^a  

^a UNIVERSITY OF HOUSTON   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING EFFECTS; BORON IMPLANTS; CO-IMPLANTATION; ELECTRICAL MEASUREMENT; HIGH ENERGY; IMPLANTATION DAMAGE; LOW ENERGIES; NUCLEAR REACTION ANALYSIS; ROOM TEMPERATURE; SILICON IMPLANTS;

BORON; HIGH ENERGY PHYSICS; RAPID THERMAL ANNEALING;

SILICON;

EID: 18744412342     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1505672     Document Type: Article

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