Using point-defect engineering to increase stability of highly doped ultrashallow junctions formed by molecular-beam-epitaxy growth

Applied Physics Letters

Volumn 83, Issue 14, 2003, Pages 2823-2825

  Shao, Lin ^a   Thompson, Phillip E ^b   Bennett, Joe ^c   Dharmaiahgari, Bhanu P ^d   Trombetta, Len ^d   Wang, Xuemei ^a   Chen, Hui ^a   Seo, Hye Won ^a   Chen, Quark Y ^a   Liu, Jiarui ^a   Chu, Wei Kan ^a  

^a University of Houston   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c SEMATECH   (United States)

^d UNIVERSITY OF HOUSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; POINT DEFECTS;

POINT-DEFECT ENGINEERING;

SEMICONDUCTOR JUNCTIONS;

EID: 10744230581     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1615685     Document Type: Article

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