The production and stability of implantation-induced vacancy excesses in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 90-93

  Ellingboe, S L ^a,b   Ridgway, M C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE CRYSTAL X RAY DIFFRACTION (DCXRD); IMPLANTATION INDUCED VACANCY EXCESSES;

AMORPHIZATION; BAND STRUCTURE; COMPRESSIVE STRENGTH; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STRAIN; STRESS RELAXATION; TENSILE STRENGTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY; YIELD STRESS;

SILICON WAFERS;

EID: 0006633541     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)01110-X     Document Type: Article

References (7)

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7. S.L. Ellingboe and M.C. Ridgway, Appl. Phys. Lett. (1997), submitted.