Reduction of boride enhanced diffusion in MeV-implanted silicon

Journal of Applied Physics

Volumn 92, Issue 10, 2002, Pages 5793-5797

  Shao, Lin ^a   Thompson, Phillip E ^b   Bleiler, Roger J ^c   Baumann, Scott ^c   Wang, Xuemei ^a   Chen, Hui ^a   Liu, Jiarui ^a   Chu, Wei Kan ^a  

^a UNIVERSITY OF HOUSTON   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c Evans Texas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

B DIFFUSION; CONTROL SAMPLES; DELTA-DOPED LAYERS; ENHANCED DIFFUSION; HIGH ENERGY; SI IONS; SI LAYER; SI SUBSTRATES; TRANSIENT BEHAVIOR;

ANNEALING; BORIDES; DIFFUSION;

SILICON;

EID: 0037113010     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1513207     Document Type: Article

References (34)

1. The National Technology Roadmap for Semiconductor Industry Association, San Jose, CA, 1997.
2. W. K. Hofker, H. W. Werner, D. P. Oosthoek, N. J. Koeman, Appl. Phys. Lett. 4, 125 (1974). apl APPLAB 0003-6951
3. P. M. Fahey, P. B. Griffin, J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989). rmp RMPHAT 0034-6861
4. N. E. B. Cowern, Phys. Rev. Lett. 65, 2434 (1990). prl PRLTAO 0031-9007
5. P. A. Stolk, H.-J. Gosssmann, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty, G. H. Gilmer, M. Jaraiz, J. M. Poate, H. S. Luftman, T. E. Haynes, J. Appl. Phys. 81, 6031 (1997). jap JAPIAU 0021-8979
6. A. Agarwal, H.-J. Gossmann, D. J. Eaglesham, D. C. Jacobson, T. E. Haynes, J. Jackson, Yu E. Erokhin, J.M. Poate, Proceedings of the 4th International Workshop on Measurement, Characterization and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, Research Triangle Park, NC, 1997.
7. A. Agarwal, H.-J. Gossmann, D. J. Eaglesham, S. B. Herner, A. T. Fiory, T. E. Haynes, Appl. Phys. Lett. 74, 2435 (1999). apl APPLAB 0003-6951
8. N. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, Phys. Rev. Lett. 82, 4460 (1999). prl PRLTAO 0031-9007
9. K. B. Winterbon, Radiat. Eff. 46, 181 (1980). rae RAEFBL 0033-7579
10. M. D. Giles, J. Electrochem. Soc. 138, 1160 (1991). jes JESOAN 0013-4651
11. V. Raineri, R. J. Schreutelkamp, F. W. Saris, K. T. F. Jansen, R. E. Kaim, Appl. Phys. Lett. 58, 922 (1991). apl APPLAB 0003-6951
12. O. W. Holland and C. W. White, Nucl. Instrum. Methods Phys. Res. B 59/60, 353 (1991). nib NIMBEU 0168-583X
13. E. G. Roth, O. W. Holland, V. C. Venezia, B. Nielsen, J. Electron. Mater. 26, 1349 (1997). jem JECMA5 0361-5235
14. V. C. Venezia, T. E. Haynes, A. Agarwal, L. Pelaz, H.-J. Gossmann, D. C. Jacobson, D. J. Eaglesham, Appl. Phys. Lett. 74, 1299 (1999). apl APPLAB 0003-6951
15. B. Nielsen, O. W. Holland, T. C. Laung, K. G. Lynn, J. Appl. Phys. 74, 1636 (1993). jap JAPIAU 0021-8979
16. C. Szeles, B. Nielsen, P. Asoka-Kumar, K. G. Lynn, M. Anderle, T. P. Ma, G. W. Rubloff, J. Appl. Phys. 76, 3403 (1994). jap JAPIAU 0021-8979
17. S. L. Ellingboe and M. C. Ridgway, Nucl. Instrum. Methods Phys. Res. B 127/128, 90 (1997). nib NIMBEU 0168-583X
18. M. Yoon, B. C. Larson, J. Z. Tischler, T. E. Haynes, J.-S. Chung, G. E. Ice, P. Zschack, Appl. Phys. Lett. 75, 2791 (1999). apl APPLAB 0003-6951
19. V. C. Venezia, D. J. Eaglesham, T. E. Haynes, A. Agarwal, D. C. Jacobson, H.-J. Gossmann, F. H. Baumann, Appl. Phys. Lett. 73, 2980 (1998). apl APPLAB 0003-6951
20. R. Kalyanaraman, T. E. Haynes, V. C. Venezia, D. C. Jacobson, H.-J. Gossmann, C. S. Rafferty, Appl. Phys. Lett. 76, 3379 (2000). apl APPLAB 0003-6951
21. G. Lulli, M. Bianconi, S. Solmi, E. Napolitani, A. Carnera, J. Appl. Phys. 87, 8461 (2000). jap JAPIAU 0021-8979
22. L. Shao, X. Lu, X. Wang, I. Rusokeva, J. Liu, W. K. Chu, Appl. Phys. Lett. 76, 2321 (2001). apl APPLAB 0003-6951
23. P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D. C. Jacobson, J. M. Poate, H. S. Luftman, Appl. Phys. Lett. 66, 568 (1995). apl APPLAB 0003-6951
24. N. E. B. Cowern, M. J. J. Theunissen, F. Roozeboom, J. G. M. van Berkum, Appl. Phys. Lett. 75, 181 (1999). apl APPLAB 0003-6951
25. Software available at http://www.srim.org., also see, J. P. Biersack and L. G. Haggmark, Nucl. Instrum. Methods 174, 257 (1980). nui NUIMAL 0029-554X
26. R. B. Fair, in Impurity Doping Processing in Silicon, edited by F. F. Y. Wang (North-Holland, New York, 1981), Chap. 7.
27. E. Lampin and V. Senez, Nucl. Instrum. Methods Phys. Res. B 147, 13 (1999). nib NIMBEU 0168-583X
28. D. R. Lim, C. S. Rafferty, F. P. Klemens, Appl. Phys. Lett. 67, 2302 (1995). apl APPLAB 0003-6951
29. V. C. Venezia, L. Pelaz, H.-J. L. Gossmann, T. E. Haynes, C. S. Rafferty, Appl. Phys. Lett. 79, 1273 (2001). apl APPLAB 0003-6951
30. T. Inada, A. Kuranouchi, H. Hirano, T. Nakamura, Y. Kiyota, T. Onai, Appl. Phys. Lett. 58, 1748 (1991). apl APPLAB 0003-6951
31. Y. Kiyota, T. Nakamura, K. Muraki, T. Inada, J. Electrochem. Soc. 141, 2242 (1994). jes JESOAN 0013-4651
32. S. Loududoss and S. L. Zhang, Appl. Phys. Lett. 64, 3467 (1994). apl APPLAB 0003-6951
33. S. Saito, M. Kumagai, T. Kondo, Appl. Phys. Lett. 63, 197 (1993). apl APPLAB 0003-6951
34. S. Saito, K. Hamada, A. Mineji, Nucl. Instrum. Methods Phys. Res. B 120, 37 (1996). nib NIMBEU 0168-583X