Analysis of electroluminescence spectra of silicon and gallium arsenide p-n junctions in avalanche breakdown

Journal of Applied Physics

Volumn 95, Issue 4, 2004, Pages 1822-1828

  Lahbabi, M ^a   Ahaitouf, A ^a   Fliyou, M ^b   Abarkan, E ^a   Charles, J P ^c   Bath, A ^c   Hoffmann, A ^d   Kerns, S E ^e   Kerns Jr , D V ^e  

^a SIDI MOHAMED BEN ABDELLAH UNIVERSITY   (Morocco)

^b Ecole Normale Superieure Marrakech   (Morocco)

^c CNRS   (France)

^d UNIVERSITÉ MONTPELLIER II   (France)

^e FRANKLIN W OLIN COLLEGE OF ENGINEERING   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; ENERGY GAP; FIELD EFFECT TRANSISTORS; HOT CARRIERS; LIGHT ABSORPTION; MATHEMATICAL MODELS; NEUTRON IRRADIATION; NUMERICAL ANALYSIS; PHOTONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON;

AVALANCHE BREAKDOWN; BAND GAP; JUNCTION FIELD EFFECT TRANSISTOR; SELF ABSORPTION;

SEMICONDUCTOR JUNCTIONS;

EID: 1542306861     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1643188     Document Type: Article

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