Enhanced electroluminescence in silicon-on-insulator metal-oxide-semiconductor transistors with thin silicon layer

Applied Physics Letters

Volumn 82, Issue 26, 2003, Pages 4830-4832

  Karsenty, Avi ^a   Sa'ar, Amir ^a   Ben Yosef, Nissim ^a   Shappir, Joseph ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; ELECTRIC BREAKDOWN; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; OPTOELECTRONIC DEVICES; PHOTONS; SILICON ON INSULATOR TECHNOLOGY;

AVALANCHE BREAKDOWN MODE; PHOTON ENERGY;

MOS DEVICES;

EID: 0038444536     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1587877     Document Type: Article

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