Analyses of electroluminescence spectra of silicon junctions in avalanche breakdown using an indirect interband recombination model

Applied Physics Letters

Volumn 77, Issue 20, 2000, Pages 3182-3184

  Lahbabi, M ^a   Ahaitouf, A ^a   Abarkan, E ^a   Fliyou, M ^b   Hoffmann, A ^c   Charles, J P ^c   Bhuva, Bharat L ^d   Kerns, S E ^e   Kerns Jr , D V ^e  

^a SIDI MOHAMED BEN ABDELLAH UNIVERSITY   (Morocco)

^b Département de Mathématiques et Informatique   (Morocco)

^c SUPELEC   (France)

^d VANDERBILT UNIVERSITY   (United States)

^e FRANKLIN W OLIN COLLEGE OF ENGINEERING   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004642110     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1326038     Document Type: Article

References (18)

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18. 1 affect the calculated intensify at high energies and thereby modify the energy range of the spectral response.