Electroluminescence analysis of neutron irradiation of JFETs

Proceedings of the International Conference on Microelectronics, ICM

Volumn 2001-January, Issue , 2001, Pages 71-74

  Ahaitouf, A ^a   Lahbabi, M ^a   Fliyou, M ^b   Abarkan, E ^a   Hoffmann, A ^c   Charles, J P ^d  

^a SIDI MOHAMED BEN ABDELLAH UNIVERSITY   (Morocco)

^b Ecole Normale Superieure Marrakech   (Morocco)

^c UNIV MONTPELLIER   (France)

^d MOPS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; IRRADIATION; MICROELECTRONICS; NEUTRONS; PASSIVATION; REFRACTIVE INDEX;

DEEP-LEVELS; FAST NEUTRON IRRADIATION; N-CHANNEL JFET; PASSIVATION OXIDES; SENSITIVE TECHNIQUES; THEORETICAL SIMULATION;

NEUTRON IRRADIATION;

EID: 84949239514     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICM.2001.997490     Document Type: Conference Paper

References (6)

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