Measurements of electroluminescence intensity distribution in the direction of gate width of n+ self-aligned gate GaAs metal-semiconductor field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 3 A, 1999, Pages 1363-1364

  Niwa, Hiroyuki ^a   Ohno, Yutaka ^a   Kishimoto, Shigeru ^a   Maezawa, Koichi ^a   Mizutani, Takashi ^a   Yamazaki, Hajime ^b   Taniguchi, Toru ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b JAPAN RADIO CO LTD   (Japan)

Author keywords

Electroluminescence; GaAs; Hole; Impact ionization; MESFET; Recombination

Indexed keywords

BAND STRUCTURE; ELECTRIC VARIABLES MEASUREMENT; ELECTROLUMINESCENCE; ELECTRON ENERGY LEVELS; ENERGY GAP; IMPACT IONIZATION; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTROLUMINESCENCE INTENSITY DISTRIBUTION; GATE DRAIN SPACING; HOLE DISTRIBUTION;

MESFET DEVICES;

EID: 0032662407     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1363     Document Type: Article

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