Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor

Journal of Applied Physics

Volumn 87, Issue 5, 2000, Pages 2548-2552

  Cavassilas, N ^a   Aniel, F ^a   Boucaud, P ^a   Adde, R ^a   Maher, H ^b   Decobert J ^b   Scavennec, A ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b OPTO+   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008580031     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372217     Document Type: Article

References (13)

1. A. Sylvestre, F. Aniel, P. Boucaud, F. H. Julien, P. Crozat, A. De Lustrac, R. Adde, Y. Jin, and J. P. Praseuth, J. Appl. Phys. 80, 464 (1996).
2. T. Enoki, K. Rai, A. Kohzen, and Y. Ishii, IEEE Trans. Electron Devices 42, 1413 (1995).
3. C. Ladner et al., Proceedings of IPRM'98, Tsukuba, Japan, 1998.
4. H. Maher, J. Décobert, A. Falcou, M. Le Pallec, G. Post, Y. I. Nissim, and A. Scavennec, IEEE Trans. Electron Devices 46, 32 (1999).
5. Properties of Lattice-Matched and Strained Indium Galium Arsenide, edited by Pallab Bhattacharya (University of Michigan, Press).
6. S. Adachi, Physical Properties of III-V Semiconductor Compounds (Gunma University Press, Kiryu-shi, Japan).
7. F. Aniel, P. Boucaud, A. Sylvestre, P. Crozat, F. H. Julien, R. Adde, and Y. Jin, J. Appl. Phys. 77, 2184 (1995).
8. J. Dickmann, H. Haspeklo, A. Geyer, H. Daembkes, H. Nickel, and R. Losch, Electron. Lett. 28, 647 (1992).
9. J. Bude and K. Hess, J. Appl. Phys. 72, 3554 (1992).
10. D. Vignaud, X. Wallart, F. Mollot, and B. Sermage, J. Appl. Phys. 84, 2138 (1998).
11. A. Gauthier Levine, R. Tessier, A. Nezzari, E. Elchuri Rao, J. Decobert, J. L. Pelouard, and A. Scavennec, Jpn. J. Appl. Phys (to be published).
12. G. Berthold, E. Zanoni, C. Canali, M. Pavesi, M. Pecchini, M. Manfredi, S. R. Bahl, and J. A. Del. Alamo, IEEE Trans. Electron Devices 42, 752 (1995).
13. N. Shigekawa, T. Enoki, T. Furuta, and H. Ito, IEEE Electron Device Lett. 16, 515 (1995).