Simulation of gallium arsenide electroluminescence spectra in avalanche breakdown using self-absorption and recombination models

Applied Physics Letters

Volumn 80, Issue 6, 2002, Pages 1004-1006

  Lahbabi, M ^a   Ahaitouf, A ^a   Abarkan, E ^a   Fliyou, M ^b   Hoffmann, A ^c   Charles, J P ^d   Bhuva, Bharat L ^e   Kerns, S E ^f   Kerns Jr , D V ^f  

^a SIDI MOHAMED BEN ABDELLAH UNIVERSITY   (Morocco)

^b Département de Mathématiques et Informatique   (Morocco)

^c UNIVERSITÉ MONTPELLIER II   (France)

^d SUPELEC   (France)

^e VANDERBILT UNIVERSITY   (United States)

^f FRANKLIN W OLIN COLLEGE OF ENGINEERING   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR JUNCTIONS;

AVALANCHE BREAKDOWN; ELECTROLUMINESCENCE SPECTRA; JUNCTION DEPTH; PHYSICAL DEVICES; RECOMBINATION MODEL; RECOMBINATION PROCESS; SELF ABSORPTION; SIMULATED SPECTRA;

GALLIUM ARSENIDE;

EID: 79955983625     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1447322     Document Type: Article

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