Hot-carrier luminescence in subquartermicrometer high-speed GAaS mesfet's

IEEE Transactions on Electron Devices

Volumn 46, Issue 11, 1999, Pages 2170-2177

  Onodera, Kiyomitsu ^a,b   Nishimura, Kazumi ^a,b   Furuta, Tomofumi ^b  

^a NTT Network Innovation Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Electric breakdown; Electroluminescence; Hot carriers; Mesfet's; Semiconductor device measurement

Indexed keywords

CARRIER MOBILITY; ELECTROLUMINESCENCE; ENERGY GAP; HOT CARRIERS; IONIZATION OF SOLIDS; LIGHT EMISSION; PHOTOCONDUCTIVITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE;

CONDUCTION-BAND TRANSITIONS; INDIRECT RECOMBINATION ENERGIES; SUB-QUARTERMICROMETER GATE LENGTHS;

MESFET DEVICES;

EID: 0033221717     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.796293     Document Type: Article

References (33)

1. K. Asai and T. Ishibashi, "GaAs-MESFET and HBT technology for picosecond electronics," in OSA Proc. Picosecond Electronics and Optoelectronics, 1989, pp. 139-142.
2. K. Onodera, K. Nishimura, K. Asai, and S. Sugitani, "High microwave and ultra-low noise performance of fully ion-implanted GaAs MESFET's with Au/WSiN T-shaped gate," IEEE Trans. Electron Devices, vol. 40, pp. 18-24, Jan. 1993.
3. K. Nishimura, K. Onodera, S. Aoyama, M. Tokumitsu, and K. Yamasaki, "High-performance 0.1-//m-self-aligned-gate GaAs MESFET technology," IEEE Trans. Electron Devices, vol. 44, pp. 2113-2119, Nov. 1997.
4. A. Toriumi, M. Yoshimi, M. Iwase, Y. Akiyama, and K. Taniguchi, "A study of photon emission from n-channel MOSFET's," IEEE Trans. Electron Devices, vol. ED-34, pp. 1501-1508, July 1987.
5. K. Hublitz and S. A. Lyon, "Light emission from hot carriers in Si MOSFET's," Semiconduct. Sci. Technol, vol. 7, pp. B567-B569, 1992.
6. M. Herzog, M. Schels, F. Kock, C. Moglestue, and J. Rosenzweig, "Electromagnetic radiation from hot carriers in FET devices," SolidState Electron., vol. 32, pp. 1065-1069, 1989.
7. J. Haruyama, N. Goto, and Y. Nashimoto, "Photoemissions related to the kink effect in GaAs metal-semiconductor field-effect transistors with AlGaAs/GaAs buffer layer," Appl. Phys. Lett., vol. 63, pp. 648-650, 1993.
8. H. P. Zappe, "Hot-electron electroluminescence in GaAs transistors," Semiconduct. Sci. Technol., vol. 7, pp. 391100, 1992.
9. E. Zanoni, S. Bigliardi, M. Manfredi, A. Paccagnella, P. Pisoni, P. Telaroli, C. Tedesco, and C. Canali, "Correlation between impact ion-ization, recombination and visible light emission in GaAs MESFET's," Electron. Lett., vol. 27, pp. 770-772, 1991.
10. A. Neviani, C. Tedesco, E. Zanoni, C. Canali, M. Manfredi, and A. Cetronio, "Impact ionization and light emission in GaAs metalsemiconductor field effect transistors," J. Appl. Phys., vol. 74, pp. 4213220, 1993.
11. R. Ostermeir, F. Koch, H. Brugger, P. Narozny, and H. Dambkes, "Band-structure effects in the hot-carrier emission spectrum of GaAs FET devices," Semiconduct. Sci. Technol., vol. 9, pp. 659-661, 1994.
12. E. Zanoni, S. Bigliardi, R. Capelleti, P. Lugli, F. Magistral;, M. Manfredi, and C. Canali, "Light emission in AlGaAs/GaAs HEMT's and GaAs MESFET's induced by hot carriers," IEEE Electron Device Lett., vol. 11, pp. 48789, 1990.
13. H. P. Zappe and D. J. As, "Spectrum of hot-electron luminescence from high electron mobility transistors," Appl. Phys. Lett., vol. 59, pp. 2257-2259, 1991.
14. E. Zanoni, M. Manfredi, S. Bigliardi, A. Paccagnella, P. Pisoni, C. Tedesco, and C. Canali, "Impact ionization and light emission in AlGaAs/GaAs HEMT's," IEEE Trans. Electron Devices, vol. 39, pp. 1849-1857, Aug. 1992.
15. C. Tedesco, E. Zanoni, C. Canali, S. Bigliardi, M. Manfredi, D. C. Streit, and W. Anderson, "Impact ionization and light emission in highpower pseudomorphic AlGaAs/InGaAs HEMT's," IEEE Trans. Electron Devices, vol. 40, pp. 1211-1214, July 1993.
16. G. Berthold, E. Zanoni, C. Canali, M. Pavesi, M. Pecchini, M. Manfredi, S. R. Bahl, and J. A. del Alamo, "Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors," IEEE Trans. Electron Devices, vol. 42, pp. 752-759, Apr. 1995.
17. J. Woodhead, M. Reddy, and J. P. R. David, "Electroluminescence from InGaAs/InAlAs HEMT's," Electron. Lett., vol. 30, pp. 1181-1183, 1994.
18. F. Aniel, P. Boucaud, A. Sylvestre, P. Crozat, F. H. Julien, and R. Adde, "Electroluminescence spectroscopy of AlGaAs/InGaAs and AlGaAs/GaAs high-electron-mobility transistors," J. Appl. Phys., vol. 77, pp. 2184-2189, 1995.
19. K. H. Hui, C. Hu, P. George, and P. K. Ko, "Impact ionization in GaAs MESFET s" IEEE Electron Device Lett., vol. 11, pp. 113-115, 1990.
20. K. Asai, H. Sugahara, Y. Matsuoka, and M. Tokumitsu, "Refractory sputtered WSiN films suppress As and Ga outdiffusion," J. Vac. Sci. Technol. B. vol. 6, pp. 1526-1529, 1988.
21. Y. Jin, C. Takahashi, K. Nishimura, T. Ono, and S. Matsuo, "0.1-ftm WSiN-gate fabrication of GaAs metal-semiconductor field-effect transistors using electron-cyclotron-resonance ion-stream etching with SF6-CF4-SiF4-O2," J. Vac. Sci. Technol. B, vol. 15, pp. 2639-2642, 1997.
22. S. Sugitani, K. Yamasaki, and H. Yamazaki, "Characterization of a thin Si-implanted and rapid thermal annealed n-GaAs layers," Appl. Phys. Lett., vol. 51, pp. 806-808, 1987.
23. K. Onodera, M. Tokumitsu, S. Sugitani, Y. Yamane, and K. Asai, "A 630-mS/mm GaAs MESFET with Au/WSiN refractory metal gate," IEEE Electron Device Lett., vol. 9, pp. 417-118, 1988.
24. K. Onodera, M. Tokumitsu, M. Tomizawa, and K. Asai, "Effect of neutral buried p-layer on high frequency performance of GaAs MESFET's," IEEE Trans. Electron Devices, vol. 38, pp. 42936, Mar. 1991.
25. M. Hirano, K. Nishikawa, I. Toyoda, S. Aoyama, S. Sugitani, and K. Yamasaki, "Three-dimensional passive circuit technology for ultracompact MMIC's," in lEEEMTT-s Tech. Dig., 1995, pp. 1447-1450.
26. P. G. Pai, S. S. Chao, and Y. Takagi, "Infrared spectroscopic study of SiOj; films produced by plasma enhanced chemical vapor deposition," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. A4, pp. 689-694, 1986.
27. N. Shigekawa, T. Enoki, T. Furuta, and H. Ito, "Electroluminescence of InAlAs/InGaAs HEMT's lattice-matched to InP substrates," IEEE Electron Device Lett., vol. 16, pp. 515-517, 1995.
28. "High-energy and recombination-induced electroluminescence of InAlAs/InGaAs HEMT's lattice-matched to InP substrates," IEEE Trans. Electron Devices, vol. 44, pp. 513-519, Apr. 1997.
29. F. Capasso, "Physics of avalanche photodiode," Semiconduct., Semimetals, pt. D, vol. 22, p. 2, 1985.
30. J. R. Chelikowsky and M. E. Cohen, "Nonlocal pseudopotential calculations for the electronic structure of eleven diamonds and zinc-blend semiconductors," Phys. Rev. B, vol. 14, pp. 556-582, 1976.
31. J. Bude, N. Sano, and A. Yoshii, "Si hot-carrier luminescence," Phys. Rev. B, vol. 45, pp. 5848-5856, 1992.
32. K. Onodera, K. Nishimura, T. Nittono, Y. Yamane, and K. Yamasaki, "Symmetric and asymmetric InGaP/InGaAs/GaAs heterostructure MESFET's and their applications to V-band amplifiers," IEIEC Trans. Electron., vol. E81, pp. 868-875, June 1998.
33. Y. Yamada, "A study on nonstationary electron transport in submicron BP-SAINT GaAs MESFET's using an ensemble Monte Carlo simulation," IEIEC Trans., vol. E74, pp. 1648-1655, June 1991.