Microscopic analysis of the degradation mechanism of gallium arsenide metal-semiconductor field-effect transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 8, 1998, Pages 4301-4305

  Sasaki, Hajime ^a,b   Hayashi, Kazuo ^a   Fujioka, Takashi ^a   Mizuguchi, Kiyoshi ^a   Yea, Byeongdeok ^b   Osaki, Tomoyuki ^b   Sugahara, Kazunori ^b   Konishi, Ryosuke ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b TOTTORI UNIVERSITY   (Japan)

Author keywords

Degradation; Drain current transient; Electroluminescence; GaAs MESFET; Hot carrier; Impact ionization; Light emission; OBIC; Raman scattering; Reliability; Surface states; Thermionic field emission; X TEM

Indexed keywords

AGING OF MATERIALS; AMORPHOUS MATERIALS; CRYSTALLOGRAPHY; DEGRADATION; MICROSCOPIC EXAMINATION; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

DEGRADATION MECHANISMS; THERMIONIC FIELD EMISSION;

MESFET DEVICES;

EID: 0032131067     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4301     Document Type: Article

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