A model for visible photon emission from reverse-biased silicon p-n junctions

Applied Physics Letters

Volumn 70, Issue 4, 1997, Pages 470-471

  Obeidat, Amjad T ^a   Kalayjian, Zaven ^a   Andreou, Andreas G ^a   Khurgin, Jacob B ^a  

^a Johns Hopkins University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000238745     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118184     Document Type: Article

References (7)

1. A. G. Cheynoweth and K. G. McKay, Phys. Rev. 102, 369 (1956).
2. T. Figielsky and A. Torun, Proceedings of the International Conference on the Physics of Semiconductors (Exeter, UK, 1962), p. 853.
3. J. Bude, N. Bano, and A. Yoshii, Phys. Rev. B 45, 5848 (1992).
4. P. A. Wolff, J. Phys. Chem. Solids 16, 184 (1960).
5. K. Hublitz and S. A. Lyon, Semicond. Sci. Technol. 7, B567 (1992).
6. J. Kramer, P. Seitz, E. Steigmeier, H. Auderst, and B. Delley. Sens. Actuators A 37-38, 527 (1993).
7. S. Yamada and M. Kitao, Jpn. J. Appl. Phys. 1 32, 4555 (1993).