Light emission and surface states annealing on GaAs metal semiconductor field-effect transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 2, 1998, Pages 455-461

  Sasaki, Hajime ^a,b   Abe, Masayuki ^a   Hayashi, Kazuo ^a   Fujioka, Takashi ^a   Mizuguchi, Kiyoshi ^a   Yea, Byeongdeok ^b   Osaki, Tomoyuki ^b   Sugahara, Kazunori ^b   Konishi, Ryosuke ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b TOTTORI UNIVERSITY   (Japan)

Author keywords

Drain current transient; Electroluminescence; GaAs MESFET; Hot carrier; Impact ionization; Light emission; OBIC; Reliability; Surface states

Indexed keywords

ANNEALING; ELECTRIC CURRENT MEASUREMENT; ELECTROLUMINESCENCE; HOT CARRIERS; IONIZATION OF SOLIDS; LIGHT MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

DRAIN CURRENT TRANSIENTS; IMPACT IONIZATION; SCHOTTKY JUNCTIONS; SURFACE STATES; THERMIONIC FIELD EMISSION;

MESFET DEVICES;

EID: 0031999482     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.455     Document Type: Article

References (21)

1. J. C. M. Hwang: IEEE GaAs IC Symp. Dig., San Diego (1995) p. 81.
2. Y. A. Tkachenko, Y. Lan, D. S. Whitefield, C. J. Wei, J. C. M. Hwang, T. D. Harris, R. D. Grober, D. M. Hwang, L. Aucoin and S. Shanfield: IEEE GaAs IC Symp. Dig., Philadelphia (1994) p. 259.
3. H. Hasegawa, K. Katsukawa, T. Itoh, T. Noguchi and Y. Kaneko: Int. Microwave Symp. (MTT-S) Dig. (1993) p. 289.
4. A. Neviani, C. Tedesco, E. Zanoni, C. Canali, M. Manfredi and A. Cetronio: J. Appl. Phys. 74 (1993) 4213.
5. H. P. Zappe and D. J. As: Appl. Phys. Lett. 57 (1990) 2919.
6. H. Q. Tserng, W. R. Frensley and P. Saunier: IEEE Electron Device Lett. 1 (1980) 20.
7. T. Furutsuka, T. Tsuji and F. Hasegawa: IEEE Trans. Electron Devices 25 (1978) 563.
8. R. Yamamoto, A. Higashisaka and F. Hasegawa: IEEE Trans. Electron Devices 25 (1978) 567.
9. M. Herzog, M. Schels, F. Koch, C. Moglesue and J. Rosenzweig: Solid State Electron. 32 (1989) 1065.
10. C. Canali, A. Neviani, C. Tedesco, E. Zanoni, A. Cetronio and C. Lanzieri: IEEE Trans. Electron Devices 40 (1993) 498.
11. S. Takamiya, T. Sonoda, M. Yamanouchi, T. Fujioka and M. Kohno: Solid State Electron. 41 (1997) 391.
12. C. Hanson, H. Fu and M. Golio: IEEE GaAs IC Symp. Dig., Philadelphia (1994) p. 255.
13. C. Tedesco, M. Manfredi, A. Paccagnella, E. Zanoni and C. Canali: Tech. Dig. Int. Electron Devices Meet. (IEDM) (1991) p. 437.
14. E. Zanoni, S. Bigliardi, R. Capelletti, P. Lugli, F. Magistrali, M. Magfredi, A. Paccagnella, N. Testa and C. Canali: IEEE Electron Device Lett. 11 (1990) 487.
15. A. Watanabe, K. Fujimoto, M. Oda, T. Nakatsuka and A. Tamura: Proc. IEEE Int. Reliability Physics Symp. (IRPS) (1992) p. 127.
16. C. Tedesco, M. Manfredi, A. Paccagenella, E. Zanoni and C. Canali: Tech. Dig. Int. Electron Devices Meeting (IEDM) (1991) p. 437.
17. H. Sasaki, K. Hayashi, T. Fujioka, K. Mizuguchi, B. Yea, T. Osaki, K. Sugahara, R. Konishi, H. Kasada and K. Ando: Jpn. J. Appl. Phys. 36 (1997) 2068.
18. H. Sasaki, K. Hayashi, T. Fujioka, K. Mizuguchi, T. Osaki, K. Sugahara, R. Konishi, H. Kasada and K. Ando: Appl. Surf. Sci. 117/118 (1997) 729.
19. Y. Kohno, H. Matsubayashi, M. Komaru, H. Takano, O. Ishihara and S. Mitsui: IEEE GaAs IC Symp. Dig., Philadelphia (1994) p. 263.
20. F. A. Padovani and R. Stratton: Solid-State Electron. 9 (1966) 695.
21. S. H. Wemple, W. C. Niehaus, H. M. Cox, J. V. Dilororenzo and W. O. Schlosser: IEEE Trans. Electron Devices 27 (1980) 1013.