Modeling of dopant and defect interactions in Si process simulators

Defect and Diffusion Forum

Volumn 221-223, Issue , 2003, Pages 31-40

  Pelaz, Lourdes ^a   Marqués, Luis A ^a   Aboy, Maria ^a   Barbolla, Juan ^a  

^a UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

Defects; Dopants; Ion implantation; Modeling

Indexed keywords

ATOMS; CALCULATIONS; COMPUTER SIMULATION; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; ION IMPLANTATION; MOLECULAR DYNAMICS; MONTE CARLO METHODS; QUANTUM THEORY; SEMICONDUCTOR DOPING;

DOPANT; KINETIC MONTE CARLO METHOD;

SEMICONDUCTING SILICON;

EID: 1442314008     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.221-223.31     Document Type: Article

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