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Volumn 186, Issue 1-4, 2002, Pages 339-343
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A kinetic lattice Monte-Carlo approach to the evolution of boron in silicon
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Author keywords
Boron; Boron interstitial cluster; Defects in doped silicon; Kinetic lattice Monte Carlo modeling; Silicon
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Indexed keywords
COMPUTER SIMULATION;
CRYSTAL DEFECTS;
CRYSTAL LATTICES;
DIFFUSION;
ION IMPLANTATION;
LATTICE CONSTANTS;
MATHEMATICAL MODELS;
MONTE CARLO METHODS;
SEMICONDUCTING BORON;
GEOMETRICAL DISTORTIONS;
SEMICONDUCTING SILICON;
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EID: 0036136060
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(01)00916-8 Document Type: Article |
Times cited : (12)
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References (23)
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