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Volumn 186, Issue 1-4, 2002, Pages 339-343

A kinetic lattice Monte-Carlo approach to the evolution of boron in silicon

Author keywords

Boron; Boron interstitial cluster; Defects in doped silicon; Kinetic lattice Monte Carlo modeling; Silicon

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL LATTICES; DIFFUSION; ION IMPLANTATION; LATTICE CONSTANTS; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTING BORON;

EID: 0036136060     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00916-8     Document Type: Article
Times cited : (12)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.