Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion

Applied Physics Letters

Volumn 74, Issue 14, 1999, Pages 2017-2019

  Pelaz, Lourdes ^a,b   Gilmer, G H ^a   Venezia, V C ^a,c   Gossmann, H J ^a   Jaraiz, M ^b   Barbolla, J ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF VALLADOLID   (Spain)

^c UNIVERSITY OF NORTH TEXAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; SEMICONDUCTING SILICON;

TRANSIENT ENHANCED DIFFUSION (TED);

ION IMPLANTATION;

EID: 0032607252     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123742     Document Type: Article

References (13)

1. M. D. Giles, J. Electrochem. Soc. 138, 1160 (1991).
2. D. J. Eaglesham, P. A. Stolk, H.-J. Gossmann, and J. M. Poate, Appl. Phys. Lett. 65, 2305 (1994).
3. M. D. Giles, S. Yu, H. W. Kennel, and P. A. Packan, Mater. Res. Soc. Symp. Proc. 469, 253 (1997).
4. K. S. Jones, J. Chen, S. Bharatan, J. Jackson, L. Rubin, M. Puga-Lambers, and D. Venables, J. Electron. Mater. 26, 1361 (1997).
5. M. Jaraiz, G. H. Gilmer, J. M. Poate, and T. D. De la Rubia, Appl. Phys. Lett. 68, 409 (1996).
6. L. Pelaz, G. H. Gilmer, M. Jaraiz, S. B. Herner, H.-J. Gossmann, D. J. Eaglesham, G. Hobler, C. S. Rafferty, and J. Barbolla, Appl. Phys. Lett. 73, 1421 (1998).
7. P. A. Packan and J. D. Plummer, Appl. Phys. Lett. 56, 1787 (1990).
8. B. J. Masters and E. F. Gorey, J. Appl. Phys. 49, 2717 (1978).
9. V. C. Venezia, L. Pelaz, H.-J. Gossmann, T. E. Haynes, A. Agarwal, D. C. Jacobson, and D. J. Eaglesham (unpublished).
10. M. T. Robinson and I. M. Torrens, Phys. Rev. B 9, 5008 (1974).
11. M. Jaraiz, L. Pelaz, J. E. Rubio, J. Barbolla, G. H. Gilmer, D. J. Eaglesham, H. J. Gossmann, and J. M. Poate, Mater. Res. Soc. Symp. Proc. 532, 43 (1998).
12. L. Pelaz, M. Jaraiz, G. H. Gilmer, H.-J. Gossmann, C. S. Rafferty, D. J. Eaglesham, and J. M. Poate, Appl. Phys. Lett. 70, 2285 (1997).
13. An inefficient sink at the surface results in a number of interstitial hops independent of implant energy, against experiments: Aditya Agarwal, H.-J. Gossmann, D. J. Eaglesham, L. Pelaz, D. C. Jacobson, T. E. Haynes, and Yu. E. Erokhin, Appl. Phys. Lett. 71, 3141 (1997). Also, more recombination between Frenkel pairs occurs because of the reduction of the alternative annihilation mechanism at the surface.