Dose, energy, and ion species dependence of the effective plus factor for transient enhanced diffusion

Journal of the Electrochemical Society

Volumn 147, Issue 9, 2000, Pages 3494-3501

  Hobler, G ^a,d   Pelaz, L ^b   Rafferty, C S ^c  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b UNIVERSITY OF VALLADOLID   (Spain)

^c LUCENT TECHNOLOGIES   (United States)

^d ELECTROCHEMICAL SOCIETY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY COLLISION; EFFECTIVE PLUS FACTORS; TRANSIENT ENHANCED DIFFUSION;

COMPUTER SIMULATION; CONTINUUM MECHANICS; INTERDIFFUSION (SOLIDS); SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

ION IMPLANTATION;

EID: 0034273843     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393926     Document Type: Article

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