Analysis of heavy-ion induced charge collection mechanisms in SOI circuits

Solid-State Electronics

Volumn 48, Issue 6, 2004, Pages 1027-1044

  Schwank, J R ^a   Ferlet Cavrois, V ^b   Dodd, P E ^a   Shaneyfelt, M R ^a   Vizkelethy, G ^a   Paillet, P ^b   Flament, O ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b CEA DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC MATERIALS; DOPING (ADDITIVES); DYNAMIC RANDOM ACCESS STORAGE; ION BEAMS; OXIDES; SILICON WAFERS; STATIC RANDOM ACCESS STORAGE; THICKNESS MEASUREMENT;

CHARGE COLLECTION; SINGLE EVENT UPSETS (SEU);

SILICON ON INSULATOR TECHNOLOGY;

EID: 1442311860     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.12.038     Document Type: Article

References (35)

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