Study of transient current induced by heavy-ion in NMOS/SOI transistors

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 2957-2964

  Colladant, T ^a,b   Flament, O ^b   L'Hoir, A ^a   Ferlet Cavrois, V ^b   D'Hose, C ^b   Du Port de Pontcharra, J ^c  

^a SORBONNE UNIVERSITÉ   (France)

^b CEA DIF   (France)

^c CEA LETI   (France)

Author keywords

Heavy ion; Parasitic bipolar transistor; SOI transistor; Transient current measurement

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; HEAVY IONS; SEMICONDUCTOR JUNCTIONS; THYRISTORS;

TRANSIENT CURRENT;

MOSFET DEVICES;

EID: 0036948059     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805437     Document Type: Conference Paper

References (19)

1. R. Chau, J. Kavalieros, B. Doyle, A. Murthy, N. Paulsen, D. lionberger, D. Barlage, R. Arghavani, B. Roberds, and M. Doczy, "A 50 nm depleted substrate CMOS transistor (DST)," in IEDM Tech. Dig., 2001, p. 621.
2. O. Musseau and V. Ferlet-Cavrois, "Silicon on insulator technologies, radiation effects," in Short Course, NSREC 2001.
3. P. E. Dodd, M. R. Shaneyfelt, D. S. Walsh, J. R. Schwank, G. L. Hash, R. A. Loemker, B. L. Draper, and P. S. Winokur, "Single-event upset and snapback in silicon-on insulator devices and integrated circuits," IEEE Trans. Nucl. Sci., vol. 47, pp. 2165-2174, Dec. 2000.
4. M. L. Alles, S. E. Kerns, L. W. Massengill, J. E. Clark, K. L. Jones, and R. E. Lowther, "Body tie placement in CMOS/SOI digital circuits for transient radiation environments," IEEE Trans. Nucl. Sci., vol. 38, pp. 1259-1264, Dec. 1991.
5. S. E. Kerns, L. W. Massengill, D. V. Kerns, M. L. Alles, T. W. Houston, H. Lu, and L. R. Hite, "Model for CMOS/SOI single-event vulnera-bility," IEEE Trans. Nucl. Sci., vol. 36, pp. 2305-2310, Dec. 1989.
6. O. Musseau, V. Ferlet-Cavrois, J. L. Pelloie, S. Buchner, D. McMorrow, and A. B. Campbell, "Laser probing of bipolar amplification in 0.25 μm MOS/SOI transistors," IEEE Trans. Nucl. Sci., vol. 47, pp. 2196-2203, Dec. 2000.
7. L. W. Massengill, D. V. Kerns, S. E. Kerns, and M. L. Alles, "Single-event charge enhancement in SOI devices," IEEE Electron Device Lett., vol. 11, pp. 98-99, Feb. 1990.
8. K. Warren, L. Massengil, R. Schrimpf, and H. Barnaby, "Analysis of the influence of MOS devices geometry on predicted SEU cross sections," IEEE Trans. Nucl. Sci., vol. 46, pp. 1363-1369, Dec. 1999.
9. C. Poivey, J. A. Barth, R. Reed, E. G. Stassinopoulos, K. A. LaBel, and M. Xapsos, "Implications of advanced microelectronics technologies for heavy ion single event effect (SEE) testing," in Proc. RADECS, Grenoble, France, 2001.
10. M. Levalois and P. Marie, "Damage induced in semiconductors by swift heavy ion irradiation," Nucl. Instrum. Methods Phys. Res, vol. B 156, no. 1-4, pp. 64-71, 1999.
11. R. S. Wagner, J. M. Bradley, C. J. ore, J. G. Beery, and R. B. Hammond, "An approach to measure ultrafast-funneling-current transients," IEEE Trans. Nucl. Sci., vol. NS-33, pp. 1651-1656, Dec. 1986.
12. R. S. Wagner, J. M. Bradley, N. Bordes, C. J. Maggiore, D. N. Sinha, and R. B. Hammond, "Transient measurements of ultrafast charge collection in semiconductor diodes," IEEE Trans. Nucl. Sci., vol. NS-34, pp. 1240-1245, Dec. 1987.
13. R. S. Wagner, N. Bordes, J. M. Bradley, C. J. Baggiore, A. R. Knudson, and A. B. Campbell, "Alpha-, boron-, silicon- and iron-ion-induced current transient in low-capacitance silicon and GaAs diodes," IEEE Trans. Nucl. Sci., vol. 35, pp. 1578-1584, Dec. 1988.
14. ISE (Integrated Systems Engineering) TCAD Manuals, Release 7.0, 2001.
15. F. L. Duan, X. Zhao, D. E. Ioannou, H. L. Hughes, and S. T. Liu, "Detrimental edge effects on the floating body phenomena in SOI MOSFETS," in Proc. 8th Int. Symp. Silicon-On-Insulator Technology and Devices, Pennington, NJ, Sept. 1997, pp. 239-244.
16. R. C. Martin and N. M. Ghoniem, "Monte Carlo simulation of coupled ion-electron transport in semiconductors," Physica Status Solidi A, vol. 104, pp. 743-754, 1987.
17. O. Musseau, "Single-event effects in SOI technologies and devices," IEEE Trans. Nucl. Sci., vol. 43, pp. 603-613, Apr. 1996.
18. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981, ch. 8.
19. O. Flament, O. Musseau, V. Ferlet-Cavrois, T. Colladant, J. L. Pelloie, S. Buchner, D. McMorrow, and A. B. Campbell, "Characterization of the parasitic bipolar in SOI technology: Comparison between direct and indirect triggering techniques," in Proc. Int. SOI Conf., Wakefield, MA, Oct. 2000, pp. 86-87.