Evaluation of soft-error hardness of DRAMs undei quasi-heavy ion irradiation using he single ion microprobe technique

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 2849-2855

  Matsukawa, T ^a   Mori, S ^a   Tanii, T ^a   Ariniura, T T ^a   Koh, M ^a   Igarashi, K ^a   Sugimoto, T ^a   Ohdomari, I ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALPHA PARTICLES; ELECTRIC CHARGE; ENERGY TRANSFER; HELIUM; ION BOMBARDMENT; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS;

DYNAMIC RANDOM ACCESS MEMORY (DRAM); LINEAR ENERGY TRANSFER (LET); SINGLE ION MICROPROBES; SOFT ERROR IMMUNITY;

RANDOM ACCESS STORAGE;

EID: 0030370393     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556876     Document Type: Article

References (18)

1. T.C.May and M.H.Woods, "Alpha-Particle-Induced SoftErrors in Dynamic Memories", IEEE Trans. Electron devices, ED26, pp.2-9, Jan. 1979.
2. D.C.Shaw, G.M.Swift, and A.H.Johnston, "Radiation Evaluation of an Advanced 64Mb 3.3V DRAM and Insights into the Effect of Scaling on Radiation Hardness", IEEE Trans. Nucl. Sei., 42, pp.1674-1680, Dec. 1995.
3. A.Holmes-Siedle and L.Adams, Handbook of Radiation Effects, Oxford: Oxford University Press, 1993, Chap.13.
4. K.M.Horn, B.L.Doyle and F.W.Sexton, "Nuclear Microprobe Imaging of Single-Event Upsets", IEEE Trans. Nucl. Sei., 39, pp.7-12, Feb. 1992.
5. S.Metzger, J.Dreute, W.Heinrich, H.Rocher, B.E.Fischer, R.Harboe-Sorensen, and L.Adams, "Heavy ion microscopy of single event upsets in CMOS SRAMs", IEEE Trans. Nucl. Sei., 41, pp.589-592, Jun. 1994.
6. T.Matsukawa, A.Kishida, T.Tanii, M.Koh, K.Horita, K.Hara, B.Shigeta, M.Goto, S.Matsuda, S.Kuboyama, and I.Ohdomari, "Total Dose Dependence of Soft-Error Hardness in 64kbit SRAMs Evaluated by Single-Ion Microprobe Technique", lEEETrans. Nucl. Sei., 41, pp.2071-2076, Dec. 1994.
7. M.Koh, K.Horita, B.Shigeta, K.Igarashi, T.Matsukawa, T.Tanii, S.Mori, and I.Ohdomari, "Quantitative investigation of localized ion irradiation effects in n-channel metal-oxidesemiconductor field-effect transistors using single ion microprobe", Appl. Phys. Lett., 68, pp.3467-3469, Jun. 1996.
8. S.Duzellier and R.Ecoffet, "Recent Trends in Single-Event Effect Ground Testing", IEEE Trans. Nucl. Sei. , 43, pp.671-677, Apr. 1996.
9. T.Matsukawa, K.Noritake, M.Koh, K.Hara, M.Goto, and I.Ohdomari, "Single-Event Upset Test of Static Random Access Memory Using Single-Ion Microprobe", Jpn. J. Appl. Phys. ,31, pp.4025-4028, Dec. 1992.
10. T.Tanii, T.Matsukawa, S.Mori, M.Koh, B.Shigeta, KJgarashi, and I.Ohdomari, "Nonscalability of Alpha-ParticleInduced Charge Collection Area", Jpn. J. Appl. Phys., 35, pp.L688-L690, Jun. 1996.
11. M.Koh, K.Hara, K.Horita, B.Shigeta, T.Matsukawa, A.Kishida, T.Tanii, M.Goto and I.Ohdomari, "Development of the single ion beam induced charge (SIBIC) imaging technique using the single ion microprobe system", Nucl. Instrm. and Meth., B93, pp.82-86,1994.
12. Z.Yu, D.Chen, L.So, and R.W.Dutton, "PISCES-2ET Two Dimensional Device Simulation for Silicon and Heterostructure", The Board of Trustees of Leland Stanford Junior University, 1994.
13. J.F.Ziegler, J.P.Biersack and U.Littmark, The Stopping Power and Ran'ge of Ions in Solids, Oxford: Pergamon, 1985.
14. P.E.Dodd, "Device Simulation of Charge Collection and Single-Event Vpset", IEEE Trans. Nucl. Sei., 43, pp.561-575, Apr. 1996.
15. H.Duss|ault, J.W.Howard Jr., R.C.Block, M.R.Pinto, W.J.Stapor, and A.R.Knundson, "Numerical Simulation of Heavy Ion Charge Generation and Collection Dynamics", IEEE Trans. Nucl. Sei., 40, pp.1926-1934, Apr. 1996.
16. D.K.Nichols, L.S.Smith, W.E.Price, R.Koga, and W.A.Kolasins|ti, "Recent trends in parts SEU susceptibility from heavy ions", lEEETrans. Nucl. Sei., NS-34, pp.1332-1337, Dec. 1987.
17. E.C.Smith, E.G.Stassinopoulos, K.LaBel, G.Brucker, and C.M.Seidlick, "Application of a Diffusion Model to SEE Cross Section of lyiodern Devices", IEEE Trans. Nucl. Sei., 42, pp. 1772-1779!, Dec. 1995.
18. J.A.Zoiitendyk, L.D.Edmonds, and L.S.Smith, "Characterization of multiple-bit errors from single-ion tracks in integrated circuits", IEEE Trans. Nucl. Sei., 36, pp.2267-2274, Dec. 1994.