Charge Collection by Capacitive Influence Through Isolation Oxides

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 2208-2218

  Ferlet Cavrois, V ^a   Paillet, P ^a   Schwank, J R ^b   Vizkelethy, G ^b   Shaneyfelt, M R ^b   Baggio, J ^a   Torres, A ^a   Flament, O ^a  

^a CEA DIF   (France)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Capacitors; Charge collection; Charge sharing; Device simulation; Diodes; DRAMs; Heavy ion irradiation; Isolation oxides; MBU sensitivity; MOS structures; SOI technology; SRAMs; Transient currents; Trench capacitors

Indexed keywords

COMPUTER SIMULATION; DIODES; DYNAMIC RANDOM ACCESS STORAGE; HEAVY IONS; IRRADIATION; RADIATION; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY;

CHARGE COLLECTION; CHARGE SHARING; DEVICE SIMULATION; HEAVY ION IRRADIATION; ISOLATION OXIDES; MBU SENSITIVITY; MOS STRUCTURES; TRANSIENT CURRENTS; TRENCH CAPACITORS;

MOS CAPACITORS;

EID: 1242332765     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.821818     Document Type: Conference Paper

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