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Thin Solid Films

Volumn 476, Issue 2, 2005, Pages 312-316

Microstructure and electrical properties of Al2O 3-ZrO2 composite films for gate dielectric applications

(6) Zhu, Ming a,b Chen, Peng a Fu, Ricky K Y a Liu, Weili b Lin, Chenglu b Chu, Paul K a

a CITY UNIVERSITY OF HONG KONG (Hong Kong)

b INSTITUTE OF GEOLOGY AND GEOPHYSICS (China)

Author keywords

Dielectric properties; Electron beam evaporation; MIS structure; ZrO2 Al2O3 film

Indexed keywords

ANNEALING; CAPACITANCE; CRYSTALLIZATION; CURRENT DENSITY; DIELECTRIC PROPERTIES; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; ELECTRON BEAMS; MICROSTRUCTURE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR MATERIALS; THIN FILMS; ZIRCONIA;

ELECTRICAL PROPERTIES; ELECTRON BEAM EVAPORATION; MIS STRUCTURE; ZRO2-AL2O3 FILMS;

ALUMINA;

EID: 13844281607 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2004.10.014 Document Type: Article

Times cited : (24)

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