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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 12, 2004, Pages 8253-8257

Chemical vapor deposition of TiAlN Film by using titanium tetrachloride, dimethylethylamine alane and ammonia gas for ULSI Cu diffusion barrier application

(2) Shin, Young Hoon a Shimogaki, Yukihiro a

a UNIVERSITY OF TOKYO (Japan)

Author keywords

Chemical vapor deposition; Copper diffusion barrier; Dimethylethylamine alane; Titanium aluminum nitride

Indexed keywords

AMINES; AMMONIA; AMORPHOUS MATERIALS; ANNEALING; CHEMICAL VAPOR DEPOSITION; COPPER; DIFFUSION; GASES; SCANNING ELECTRON MICROSCOPY; TITANIUM COMPOUNDS; VACUUM APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

COPPER DIFFUSION BARRIER; DIMETHYLETHYLAMINE ALANE; METASTABLE STRUCTURE; TITANIUM ALUMINUM CHLORIDE;

THIN FILMS;

EID: 13744256507 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.8253 Document Type: Article

Times cited : (16)

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