TiSiN films produced by chemical vapor deposition as diffusion barriers for Cu metallization

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1471-1475

  Joseph, S ^a   Eizenberg, M ^a   Marcadal, C ^b   Chen, L ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER; DIFFUSION; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; PLASMA APPLICATIONS; PYROLYSIS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; TITANIUM COMPOUNDS; ULSI CIRCUITS;

COPPER METALLIZATION; DIFFUSION BARRIER MATERIAL; ETCH-PITTING TEST; PLASMA TREATMENT; TETRAKIS-DIMETHYLAMINO-TITANIUM; TITANIUM SILICON NITRIDE;

SEMICONDUCTING FILMS;

EID: 0035982569     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1494068     Document Type: Conference Paper

References (13)