Diffusion barrier property of TiN and TiN/Al/TiN films deposited with FMCVD for Cu interconnection in ULSI

Science and Technology of Advanced Materials

Volumn 5, Issue 4, 2004, Pages 399-405

  Shin, Young Hoon ^a   Shimogaki, Yukihiro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Diffusion barrier; Flow modulation chemical vapour deposition; Titanium nitride

Indexed keywords

AMMONIA; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; DIFFUSION; GRAIN BOUNDARIES; METALLIZING; SILICON; SUBSTRATES; THERMODYNAMIC STABILITY; ULSI CIRCUITS;

COPPER INTERCONNECTION TECHNOLOGY; DIFFUSION BARRIERS; FLOW MODULATION CHEMICAL VAPOR DEPOSITION (FMCVD);

TITANIUM COMPOUNDS;

EID: 3042690013     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.stam.2004.02.001     Document Type: Article

References (14)

1. Schintlmeister W., Pacher O., Pfaffinger K. J. Electrochem. Soc. 123:1976;924.
2. Roux L., Hanus J., Francois J.C., Sigirist M. Sol. Energy. 7:1982;299.
3. Kurtz S.R., Gordon R.G. Thin Solid Films. 140:1986;277.
4. Nicolet M.A. Thin Solid Films. 52:1978;415.
5. Ostling M., Nygren S., Petersson C.S., Norstorm H., Butcha R., Blom H.O., Berg S. Thin Solid Films. 145:1986;81.
6. Olowolafe J.O., Mogab C.J., Gregory R.B., Kotteke M. J. Appl. Phys. 72:1992;4099.
7. Wang S.Q., Raaijmakers I., Burrow B.B., Suthar S., Redkar S., Kim K.-B. J. Appl. Phys. 68:1990;5176.
8. Nam K.T., Datta A., Kim S.H., Kim K.B. Appl. Phys. Lett. 79:(16):2001;2549.
9. Hamamura H., Komiyama H., Shimogaki Y. Jpn. J. Appl. Phys. 40:2001;1517.
10. Lee C., Shin Y.-H. Mater. Chem. Phys. 57:1998;17-22.
11. Iino T., Sugiyama M., Itoh H., Aoyama J., Komiyama H., Shimogaki Y. Advanced Metallization Conference. 2001;. p. 72.
12. Weidner W., Weidner G., Hausmann A., Ritter G. Conference Proceedings of ULSI XII 1997 Materials Research Society. 1997;. pp. 71-79.
13. Park K.-C., Kim K.-B., Raaijmakers I., Ngan K. J. Appl. Phys. 80:1996;5674.
14. Kaloyeros A.E., Chen X., Stark T., Kumar K., Seo S.-C., Peterson G.G., Frisch H.L., Arkles B., Sullivan J. J. Electrochem. Soc. 146:1999;170.