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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 6, 2001, Pages 2831-2834

Study on the characteristics of TiAlN thin film deposited by atomic layer deposition method

(6) Koo, J a Lee, J W a Doh, T a Kim, Y a Kim, Y D a Jeon, H a

a Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; ELECTRIC CONDUCTIVITY; FILM GROWTH; INTERFACES (MATERIALS); LATTICE CONSTANTS; MAGNETRON SPUTTERING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STOICHIOMETRY; SUBSTRATES; TITANIUM COMPOUNDS;

ATOMIC LAYER DEPOSITION (ALD);

THIN FILMS;

EID: 0035529031 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1409375 Document Type: Article

Times cited : (15)

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