Improvement of TiN flow modulation chemical vapor deposition from TiCl 4 and NH3 by introducing Ar purge time

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 A, 2004, Pages 1619-1624

  Jun, Keeyoung ^a   Im, Ik Tae ^b   Shimogaki, Yukihiro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b Iksan National College   (South Korea)

Author keywords

Ar purge; Flow modulation chemical vapor deposition (FMCVD); NH3; Partial pressure; Process optimization; Resistivity; Step coveerage; TiCl4; Titanium nitride (TiN)

Indexed keywords

AMMONIA; ANNEALING; ARGON; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; HIGH TEMPERATURE EFFECTS; METALLIC FILMS; OPTIMIZATION; PARTIAL PRESSURE; REDUCTION; ULSI CIRCUITS;

AR PURGES; FLOW MODULATION CHEMICAL VAPOR DEPOSITION (FMCVD); PROCESS OPTIMIZATION; STEP COVEERAGE; TICL4;

TITANIUM NITRIDE;

EID: 3042854229     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1619     Document Type: Article

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