Deposition of copper thin films on titanium nitride layer prepared by flow modulation CVD technology

Materials Science Forum

Volumn 449-452, Issue I, 2004, Pages 457-460

  Cho, Nam Ihn ^a   Kim, Min Chul ^a   Rim, Kyung Hwa ^b   Chang, Ho Jung ^c   Jun, Keeyoung ^d   Shimogaki, Yukihiro ^d  

^a SunMoon University   (South Korea)

^b Korea University of Technology and Education   (South Korea)

^c Dankook University   (South Korea)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

Copper (Cu); Flow Modulation Chemical Vapor Deposition (FMCVD); Interconnection Processing; Sputtering; Titanium Nitride (TiN)

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; COPPER; COPPER DEPOSITS; DIFFUSION IN SOLIDS; ELECTRODEPOSITION; HEAT TREATMENT; MAGNETRON SPUTTERING; NITRIDES; PHASE MODULATION; POLYCRYSTALLINE MATERIALS; REDUCTION; THIN FILMS; VACUUM APPLICATIONS; X RAY DIFFRACTION;

DIFFUSION BARRIER; FLOW MODULATION CHEMICAL VAPOR DEPOSITION (FMCVD); INTERCONNECTION PROCESSING; TITANIUM NITRIDE (TIN);

CHEMICAL VAPOR DEPOSITION;

EID: 3142668519     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.449-452.457     Document Type: Conference Paper

References (7)

1. S.W. Lee, E.G. Shi, and S.D. Lopatin, J. Electronic Materials Vol. 32, (2003), p. 27
2. N.I. Cho, H.G. Nam, Y. Choi, and J.S. Yang, Microelectronic Engineering Vol. 66 (2003), p. 415
3. G. Schindler, G. Steinlesberger, M. Engelhardt, and W. Steinhogl, Solid-State Electronics Vol. 47 (2003), p. 1233
4. N. I. Cho and Y. Sul, Material Sec. Eng. Vol. B72 (2000), p. 184.
5. P. Mott, M. Proust, J. Torres, Y. Gobil, Y. Morand, J. Palleau, R. Pantel, and M. Juhel, Microelectronic Engineering Vol. 74 (2000), p. 369
6. K. Chen, Y. Yu, H. Mu, E.Z. Luo, B. Sundaravel, S.P. Wong, and I.H. Wilson, Surface and Coating Technology Vol. 151 (2002), p. 434
7. H. Hamamura, H. Komiyama, and Y. Shimogaki, Jpn. J. Appl. Phys. Vol. 40 (2001), p.1517