Gain, index variation, and linewidth-enhancement actor in 980-nm quantum-well and quantum-dot lasers

IEEE Journal of Quantum Electronics

Volumn 41, Issue 2, 2005, Pages 117-126

  Rodríguez, Daniel ^a   Esquivias, I ^a   Deubert, Stefan ^b   Reithmaier, J P ^b   Forchel, A ^b   Krakowski, Michel ^c   Calligaro, Michel ^c   Parillaud, Olivier ^c  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b UNIVERSITY OF WÜRZBURG   (Germany)

^c THALES RESEARCH AND TECHNOLOGY   (France)

Author keywords

Gain; Linewidth enhancement factor; Quantum dot (QD) laser; Quantum well (QW) laser; Semiconductor lasers

Indexed keywords

ELECTRON TRANSITIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

GAIN; INDEX VARIATION; LINEWIDTH-ENHANCEMENT FACTOR; QUANTUM DOT LASER;

SEMICONDUCTOR LASERS;

EID: 13444309580     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.840083     Document Type: Article

References (41)

1. C. H. Henry, "Theory of the linewidth of semiconductor lasers," IEEE J. Quantum Electron., vol. 19, no. 2, pp. 259-264, Feb. 1982.
2. M. Osiński and J. Buss, "Linewidth broadening factor in semiconductor lasers - An overview," IEEE J. Quantum Electron., vol. 23, no. 1, pp. 9-29, Jan. 1987.
3. I. D. Henning and J. V. Collins, "Measurements of the semiconductor laser linewidth broadening factor," Electron. Lett., vol. 19, pp. 927-929, Oct. 1983.
4. J. R. Marciante and G. P. Agrawal, "Spatiotemporal characteristics of filamentation in broad-area semiconductor lasers," IEEE J. Quantum Electron., vol. 33, no. 7, pp. 1174-1179, Jul. 1997.
5. J. R. Marciante, and G.P. Agrawal, "Nonlineal mechanisms of filamentation in broad-area semiconductor lasers," IEEE J. Quantum Electron., vol. 32, no. 4, pp. 590-596, Apr. 1996.
6. S. Ramanujan and H. Winful, "Spontaneous emission induced filamentation in flared amplifiers," IEEE J. Quantum Electron., vol. 32, no. 5, pp. 784-789, May 1996.
7. D. J. Bossert and D. Gallant, "Gain, refractive index, and α-parameter in InGaAs-GaAs SQW broad-area lasers," IEEE Photon. Technol. Lett. vol. 8, no. 3, pp. 322-324, Mar. 1996.
8. 0.5As strained quantum well lasers," Appl. Phys. Lett., vol. 58, no. 20, pp. 2198-2199, May 1991.
9. M. Chand, S. N. G. Chu, N. K. Dutta, J. Lopata, M. Geva, A. V. Syrbu, A. Z. Mereutza, and V. P. Yakovlev, "Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers," IEEE J. Quantum Electron., vol. 30, no. 2, pp. 81-84, Feb. 1994.
10. N. Dutta, W. Hobson, D. Vakhshoori, H. Han, P. Freeman, J. de Jong, and J. Lopata, "Strain compensated InGaAs-GaAsP-InGaP laser," IEEE Photon. Technol. Lett., vol. 8, no. 7, pp. 852-854, Jul. 1996.
11. M. Willatzen, T. Tanaka, Y. Arakawa, and J. Singh, "Polarization dependence of optoelectronic properties in quantum dots and quantum wires-consequences of valence-band mixing," IEEE J. Quantum Electron., vol. 30, no. 3, pp. 640-653, Mar. 1994.
12. D. Bimberg, N. Kirstaedter, N. Ledentsov, Z. Alferov, P. Kop'ev, and V. Ustinov, "InGaAs-GaAs quantum-dot lasers," IEEE J. Sel. Topics Quantum Electron., vol. 3, no. 2, pp. 196-205, Apr. 1997.
13. T. Newell, D. Bossert, A. Stintz, B. Fuchs, K. Malloy, and L. Lester, "Gain and linewidth enhancement factor in InAs quantum-dot laser diodes," IEEE Photon. Technol. Lett., vol. 11, no. 12, pp. 1527-1529, Dec. 1999.
14. P. K. Kondratko, S.-L. Chuang, G. Walter, T. Chung, and N. Holonyak Jr., "Observations of near-zero linewidth enhancement factor in a quantum-well coupled quantum-dot laser," Appl. Phys. Lett., vol. 83, no. 23, pp. 4818-4820, Dec. 2003.
15. H. Saito, K. Nishi, A. Kamei, and S. Sugou, "Low chirp observed in directly modulated quantum dot lasers," IEEE Photon. Technol. Lett. vol. 12, no. 10, pp. 1298-1300, Oct. 2000.
16. H. Saito, K. Nishi, and S. Sugou, "Low chirp operation in 1.6 μm quantum dot laser under 2.5 GHz direct modulation," Electron. Lett. vol. 37, no. 21, pp. 1293-1295, Oct. 2001.
17. L. D. Westbrook, "Measurements of dg/dN and dn/dN and their dependence on photon energy in λ = 1.5-μm InGaAsP laser diodes," Proc. Inst. Elect. Eng., vol. 133, pp. 135-142, 1986.
18. V. Jordan, "Gain measurement of semiconductor laser diodes: Requirements for the wavelength resolution and sensitivity to noise," Proc. Inst. Elect. Eng. - Optoelectron., vol. 141, no. 1, pp. 13-15, Feb. 1994.
19. D. Rodríguez, L. Borruel, I. Esquivias, M. Krakowski, and P. Collot, "Measurement of gain spectra, refractive index shift, and linewidth enhancement factor in Al-free 980 nm lasers with broadened waveguide," Proc. SPIE, vol. 4646, pp. 344-354, 2002.
20. 0.6As self-assembled quantum dot lasers," Electron. Lett., vol. 39, no. 20, pp. 1443-1445, Oct. 2003.
21. A. A. Ukhanov, A. Stintz, P. G. Eliseev, and K. J. Malloy, "Comparison of the carrier induced refractive index, gain, and linewidth enhancement factor in quantum dot and quantum well lasers," Appl. Phys. Lett. vol. 84, no. 7, pp. 1058-1060, Feb. 2004.
22. D. Rodríguez, L. Borruel, I. Esquivias, H. Wenzel, B. Sumpf, and G. Erbert, "CW technique for measurement of linewidth enhancement factor: Application to 735 nm tensile-strained GaAsP quantum well lasers," IEEE Photon. Technol. Lett., vol. 16, no. 6, pp. 1041-1135, Jun. 2004.
23. M. Krakowski, S. Auzanneau, M. Calligaro, O. Parillaud, E. Collot, M. Lecomte, B. Boulant, and T. Fillardet, "High-power and high-brightness laser diode structures using Al-free materials," Proc. SPIE, vol. 4651, pp. 80-91, 2002.
24. F. Klopf, S. Deubert, J. P. Reithmaier, and A. Forchel, "Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers," Appl. Phys. Lett., vol. 81, no. 2, pp. 217-219, 2002.
25. S. C. Auzanneau, M. Calligaro, M. Krakowski, F. Klopf, S. Deubert, J. P. Reithmaier, and A. Forchel, "High-power (3 W) GaInAs/(Al)GaAs quantum dot tapered laser arrays with high wavelength stability and low divergence," in Proc. Conf. Lasers and Electro-Optics(CLEO), S. Francisco, CA, May 2004, Paper CTuP10.
26. G. E. Shtengel, R. F. Kazarinov, G. L. Belenky, M. S. Hybertsen, and D. A. Ackerman, "Advances in measurements of physical parameters of semiconductor lasers," in Advances in Semiconductor Lasers and Applications to Optoelectronics, M. Dutta and M. A. Stroscio, Eds, Singapore: World Scientific, 2000, pp. 55-94.
27. F. Prince, T. Mattos, N. Patel, D. Kasemset, and C. S. Hong, "Waveguiding, spectral, and threshold properties of a stripe geometry single quantum well laser," IEEE J. Quantum Electron., vol. 21, no. 6, pp. 634-639, Jun. 1985.
28. B. W. Hakki and T. L. Paoli, "Gain spectra in GaAs double-hetereojunction injection lasers," J. Appl. Phys., vol. 46, pp. 1299-1306, Mar. 1975.
29. G. E. Shtengel, P. A. Morton, R. F. Kazarinov, D. A. Ackerman, M. Hybertsen, G. L. Belenky, and C. L. Reynolds, "Experimental study of physical parameters of semiconductor lasers," Proc. SPIE, vol. 2994, pp. 678-689, 1997.
30. I. P. Marko, A. R. Adams, S. J. Sweeney, I. R. Sellers, D. J. Mowbray, M. S. Skolnick, H. Y. Liu, and K. M. Groom, "Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 μm quantum dot lasers," in Proc. 19th IEEE Int. Semiconductor Laser Conf., Matsue, Japan, Sep. 2004. Paper ThB4.
31. D. Rodríguez, L. Borruel, I. Esquivias1, and M. Krakowski, "Medidas de ganancia, índice de refracción diferencial y factor de aumento de línea (Factor α) en diodos láser de pozo cuántico de InGaAs/ InGaAsP," in Proc. OPTOEL, Leganés, Spain, Jul. 2003, pp. T1.13-T1.16.
32. L. Borruel, S. Sujecki, P. Moreno, J. Wykes, M. Krakowski, B. Sumpf, P. Sewell, S. Auzanneau, H. Wenzel, D. Rodríguez, T. Benson, E. Larkins, and I. Esquivias, "Quasi-3-D simulation of high-brightness tapered lasers," IEEE J. Quantum Electron., vol. 40, no. 5, pp. 463-472, May 2004.
33. C. Ellmers, A. Girndt, M. Hofmann, A. Knorr, W. W. Rühle, F. Jahnke, and S. W. Koch, "Measurement and calculation of gain spectra for (GaIn)As/(AlGa)As single quantum well lasers," Appl. Phys. Lett., vol. 72, pp. 1647-1649, 1998.
34. F. Beffa, H. Jäckel, M. Achtenhagen, C. Harder, and D. Erni, "High-temperature optical gain of 980 nm InGaAs/AlGaAs quantum-well lasers," Appl. Phys. Lett., vol. 77, no. 15, pp. 2301-2303, Oct. 2000.
35. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits. New York: Wiley, 1995.
36. I. V. Akimova and P. G. Eliseev, "Emission of strained-layer InGaAs quantum well under high injection level: Study of band-filling and broadening effects," Proc. SPIE, vol. 2693, pp. 640-651, 1996.
37. J. P. Reithmaier and A. Forchel, "Single-mode distributed feedback and microlasers based on quantum-dot gain material," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 5, pp. 1035-1044, Sep.-Oct. 2002.
38. A. Bogatov, A. Boltaseva, A. Drakin, M. Belkin, and V. Konyaev, "Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers," Quantum Electron., vol. 30, no. 4, pp. 315-320, 2000.
39. C. Ning, W. Chow, D. Bossert, R. Indik, and J. Moloney, "Influences of unconfined states on the optical properties of quantum-well structures," IEEE J. Sel. Topics Quantum Electron., vol. 3, no. 2, pp. 129-135, Apr. 1997.
40. 0.6As/GaAs self-organized quantum dot lasers at room temperature," Appl. Phys. Lett., vol. 81, no. 16, pp. 3055-3057, Oct. 2002.
41. J. Muszalski, J. Houlihan, G. Huyet, and B. Coberr, "Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm," Electron. Lett., vol. 40, no. 7, pp. 428-430, Apr. 2004.