Strain compensated InGaAs-GaAsP-InGaP laser

IEEE Photonics Technology Letters

Volumn 8, Issue 7, 1996, Pages 852-854

  Dutta, N K ^a,b   Hobson, W S ^b   Vakhshoori, D ^b   Han, H ^b   Freeman, P N ^b   De Jong, J F ^b   Lopata, J ^b  

^a IEEE

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BANDWIDTH; GAIN MEASUREMENT; LIGHT EMITTING DIODES; NATURAL FREQUENCIES; OSCILLATIONS; PERFORMANCE; QUANTUM EFFICIENCY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN;

CONVENTIONAL STRAINED LAYER LASER; GAIN COEFFICIENT; LINEWIDTH ENHANCEMENT FACTOR; RIDGE WAVEGUIDE LASERS; STRAIN COMPENSATED LASER; THRESHOLD CURRENT; WAVELENGTH CHIRP;

SEMICONDUCTOR LASERS;

EID: 0030190574     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.502248     Document Type: Article

References (9)

1. H. Asonen, A. Ovtchinnikov, G. Zhang, J. Näppi, P. Savolainen, and M. Pessa, "Aluminum free 980 nm GaInAs/GaInAsP/GaInP pump lasers," IEEE J. Quantum Electron., vol. 30, pp. 415-423, 1994.
2. (x)As quantum well lasers," IEEE J. Quantum Electron., vol. 28, pp. 1983-1989, 1992.
3. G. Zhang and A. Ovtchinnikov, "A strain compensated InGaAs/GaAsP/GaInP quantum well lasers grown by gas source MBE," Appl. Phys. Lett., vol. 62, pp. 1644-1646, 1993.
4. G. P. Agrawal and N. K. Dutta, Semiconductor Lasers. New York: van Nostrand Reinhold Co., 1992, ch. 6.
5. B. W. Hakki and T. L. Paoli, J. Appl. Phys., "Gain spectra in double heterostructure injection lasers," vol. 46, pp. 1299-1306, 1975.
6. N. K. Dutta, J. D. Wynn, D. L. Sivco, and A. Y. Cho, "High speed modulation and nonlinear damping effect in InGaAs/GaAs lasers," Appl. Phys. Lett., vol. 56, pp. 2293-2294, 1990.
7. H. Han, P. N. Freeman, W. S. Hobson, N. K. Dutta, J. Lopata, and S. N. G. Chu, "High speed modulation of strain compensated modulation doped multi quantum well lasers," to be published.
8. S. Weisser, E. C. Larkins, K. Czotscher, W. Binz, J. Daleiden, J. Fleissner, M. Maier, J. D. Ralston, B. Romero, A. Schonfolder, and J. Rosenzweig, "37 GHz modulation bandwidth in short cavity InGaAs/GaAs MQW lasers," in LEOS Annu. Meet., 1995, pp. 91-92, paper SCL 1.1.
9. J. D. Ralston, "High speed modulation of semiconductor lasers," presented at the Int. Symp. Compound Semiconduct. (ISCS-22), Cheju Island, Korea, Aug. 28-Sept. 1, 1995.